MMBT4403 Просмотр технического описания (PDF) - General Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MMBT4403 Datasheet PDF : 3 Pages
| |||
MMBT4403
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at ÐIC = 0.1 mA, IE = 0
Collector-Emitter Breakdown Voltage(1)
at ÐIC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at ÐIE = 0.1 mA, IC = 0
Collector-Emitter Saturation Voltage(1)
at ÐIC = 150 mA, ÐIB = 15 mA
at ÐIC = 500 mA, ÐIB = 50 mA
Base-Emitter Saturation Voltage(1)
at ÐIC = 150 mA, ÐIB = 15 mA
at ÐIC = 500 mA, ÐIB = 50 mA
Collector-Emitter Cutoff Current
at ÐVEB = 0.4 V, ÐVCE = 35 V
Emitter-Base Cutoff Current
at ÐVEB = 0.4 V, ÐVCE = 35 V
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 2 V, ÐIC = 150 mA
at ÐVCE = 2 V, ÐIC = 500 mA
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Current Gain-Bandwidth Product
at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHz
Collector-Base Capacitance
at ÐVCB = 10 V, IE = 0, f = 1 MHz
Emitter-Base Capacitance
at ÐVEB = 0.5 V, IC = 0, f = 1 MHz,
SYMBOL
ÐV(BR)CBO
ÐV(BR)CEO
ÐV(BR)EBO
ÐVCEsat
ÐVCEsat
ÐVBEsat
ÐVBEsat
ÐICEX
ÐIBEV
hFE
hFE
hFE
hFE
hFE
hie
fT
CCBO
CEBO
MIN.
40
40
5.0
Ð
Ð
0.75
Ð
Ð
Ð
30
60
100
100
20
1.5
200
Ð
Ð
NOTES:
(1) Pulse test: pulse width ² 300m duty cycle ² 2%
MAX.
Ð
Ð
Ð
0.40
0.75
0.95
1.30
100
100
Ð
Ð
Ð
300
Ð
15
Ð
8.5
30
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
MHz
pF
pF
Share Link: 