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MMBT3906 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MMBT3906
GE
General Semiconductor GE
MMBT3906 Datasheet PDF : 3 Pages
1 2 3
MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Voltage Feedback Ratio
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Small Signal Current Gain
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Output Admittance
at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz
Noise Figure
at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW,
f = 10 É 15 000 Hz
Delay Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
Rise Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
Storage Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
Fall Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
hre
0.5 á 10Ð4
8 á 10Ð4
Ð
hfe
100
400
Ð
hoe
1
40
mS
NF
Ð
4
dB
td
Ð
35
ns
tr
Ð
35
ns
ts
Ð
225
ns
tf
Ð
75
ns
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
0.30 (7.5)
0.12 (3)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
0.06 (1.5)
0.20 (5.1)
Dimensions in inches and (millimeters)
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors

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