MMBT3904 Просмотр технического описания (PDF) - TAITRON Components Incorporated
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MMBT3904 Datasheet PDF : 3 Pages
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SMD General Purpose Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MMBT3904
Symbol
Description
hFE
D.C. Current Gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCEsat
Collector-Emitter Saturation Voltage
VBEsat
ICEV
IEBV
fT
CCBO
CEBO
Base-Emitter Saturation Voltage
Collector-Emitter Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
NF
Noise Figure
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Min.
40
70
100
60
30
60
40
6.0
-
-
0.65
-
-
-
300
-
-
Max.
-
-
300
-
-
-
-
-
0.2
0.3
0.85
0.95
50
50
-
4.0
8.0
Unit
V
V
V
V
V
nA
nA
MHz
pF
pF
-
5.0
dB
-
35
-
35
ns
-
200
-
50
Conditions
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VEB=3V, VCE=30V
VEB=3V, VCE=30V
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, f=1.0MHz,
IE=0
VEB=0.5V, f=1.0MHz,
IC=0
VCE=5V, IC=100µA,
RS=1kΩ,
f=10Hz to 15.7KHz
IB1=1mA
IC=10mA
IB1= IB2=1mA
IC=10mA
www.taitroncomponents.com
Rev. A/AH 2007-12-22
Page 2 of 3
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