MMBT3416LT3G(2009) Просмотр технического описания (PDF) - ON Semiconductor
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MMBT3416LT3G Datasheet PDF : 7 Pages
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MMBT3416LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 4.5 Vdc)
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Collector Cutoff Current
(VCB = 18 Vdc, TA = 100°C)
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)
Symbol
Min
Max
Unit
V(BR)CEO
40
−
Vdc
V(BR)EBO
4.0
−
Vdc
ICBO1
−
100
nAdc
IEBO
−
100
nAdc
hFE
75
225
−
VCE(sat)
−
0.3
Vdc
VBE(sat)
0.6
1.3
Vdc
ICBO2
hFE
−
15
mAdc
75
−
−
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
275
10 k
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
0
CS < 4.0 pF*
- 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF
Figure 1. Turn−On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn−Off Time
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