MMBT2222A Просмотр технического описания (PDF) - TAITRON Components Incorporated
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MMBT2222A Datasheet PDF : 3 Pages
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SMD General Purpose Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MMBT2222A
Symbol
Description
hFE
D.C. Current Gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
VCEsat
Collector-Emitter Saturation Voltage*
VBEsat
ICEX
Base-Emitter Saturation Voltage*
Collector Cut-off Current
ICBO
Collector Cut-off Current
IBL
IEBO
fT
Base Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure
rb’Cc
td
Collector Base Time Constant
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
www.taitroncomponents.com
Min.
35
50
75
35
100
40
50
75
40
6.0
-
-
0.6
-
-
-
-
-
300
-
-
-
-
-
-
-
-
Max.
-
-
-
-
300
-
-
-
-
-
0.3
1.0
1.2
2.0
10
10
10
20
10
-
8.0
25
4.0
150
10
25
225
60
Unit
V
V
V
V
V
nA
nA
µA
nA
nA
MHz
pF
pF
dB
ps
ns
Conditions
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=10mA
Ta=-55° C
VCE=10V, IC=150mA*
VCE=10V, IC=500mA*
VCE=1.0V, IC=150mA*
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=3V, VCE=60V
VCB=60V, IE=0
VCB=60V, IE=0,
Ta=125° C
VEB=3V, VCE=60V
VEB=3V, IC=0
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, f=1.0MHz,
IE=0
VEB=0.5V, f=1.0MHz,
IC=0
VCE=10V, IC=100µA,
Rs=1kΩ, f=1kHz
VCB=20V, IC=20mA,
f=31.8 MHz
IB1=15mA
IC=150mA
VCC=30V
VEB=0.5V
IB1=IB2=15mA
IC=150mA
VCC=30V
Rev. A/AH 2007-11-13
Page 2 of 3
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