MJH10012 Просмотр технического описания (PDF) - Inchange Semiconductor
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MJH10012 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJH10012
DESCRIPTION
·With TO-3PN package
·High voltage,high current
·DARLINGTON
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
固IN电C半H导AN体GE SEMICONDUCTOR Abolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
400
8
UNIT
V
V
V
IC
Collector current
10
A
ICP
Collector current-peak
15
A
IB
Base current
2
A
PC
Collector power dissipation
TC=25℃
118
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
0.95
UNIT
℃/W
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