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MJF13007 Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MJF13007
SWITCHMODE NPN Bipolar Power Transistor
ON Semiconductor
MJF13007 Datasheet PDF : 12 Pages
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MJE13007
Table 1. Test Conditions For Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+15Ă
V 1
µ
F
150Ă
Ω
3ĂW
MPF930
+10ĂV
COMMON
V
off
50Ă
Ω
500
µ
F
100Ă
Ω
3ĂW
MPF930
MTP8P10
MTP8P10
MUR105
R
B1
MJE210
R
B2
150Ă
Ω
3ĂW
MTP12N10
100
µ
F
V
CC
L
MUR8100E
A
I
B
I
B
I
C
V
clamp
= 300 Vdc
5.1 k
TUT
V
CE
51
1
µ
F
RESISTIVE
SWITCHING
+125
V
R
C
R
B
TUT
SCOPE
D
1
-Ă4 V
I
C
I
CM
t
1
V
CE
V
CEM
TIME
V
(BR)CEO(sus)
L = 10 mH
R
B2
= 8
V
CC
= 20 Volts
I
C(pk)
= 100 mA
Inductive
Switching
L = 200 mH
R
B2
= 0
V
CC
= 15 Volts
R
B1
selected for
desired I
B1
RBSOA
L = 500 mH
R
B2
= 0
V
CC
= 15 Volts
R
B1
selected for
desired I
B1
t
f
CLAMPED
t
f
UNCLAMPED
≈
t
2
t
t
f
V
clamp
t
t
2
t
1
ADJUSTED TO
OBTAIN I
C
L
coil
(I
CM
)
t
1
≈
V
CC
t
2
≈
L
coil
(I
CM
)
V
clamp
TEST EQUIPMENT
SCOPE Ċ TEKTRONIX
475 OR EQUIVALENT
TYPICAL
WAVE-
FORMS
V
CE
PEAK
V
CE
I
B1
I
B
I
B2
V
CC
= 125 V
R
C
= 25
Ω
D1 = 1N5820 OR
EQUIV.
+11 V
25
µ
s
0
9V
t
r
, t
f
< 10 ns
DUTY CYCLE = 1.0%
R
B
AND R
C
ADJUSTED
FOR DESIRED I
B
AND I
C
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