MJF13007 Просмотр технического описания (PDF) - ON Semiconductor
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MJF13007 Datasheet PDF : 12 Pages
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MJE13007
Table 1. Test Conditions For Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+15Ă
V 1 µF
150ĂΩ
3ĂW
MPF930
+10ĂV
COMMON
Voff
50ĂΩ
500 µF
100ĂΩ
3ĂW
MPF930
MTP8P10
MTP8P10
MUR105 RB1
MJE210
RB2
150ĂΩ
3ĂW
MTP12N10
100 µF
VCC
L
MUR8100E
A
IB
IB
IC
Vclamp = 300 Vdc
5.1 k
TUT
VCE
51
1 µF
RESISTIVE
SWITCHING
+125
V
RC
RB TUT
SCOPE
D
1
-Ă4 V
IC
ICM
t1
VCE
VCEM
TIME
V(BR)CEO(sus)
L = 10 mH
RB2 = 8
VCC = 20 Volts
IC(pk) = 100 mA
Inductive
Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
tf CLAMPED
tf UNCLAMPED ≈ t2
t
tf
Vclamp
t
t2
t1 ADJUSTED TO
OBTAIN IC
Lcoil (ICM)
t1 ≈ VCC
t2 ≈
Lcoil (ICM)
Vclamp
TEST EQUIPMENT
SCOPE Ċ TEKTRONIX
475 OR EQUIVALENT
TYPICAL
WAVE-
FORMS
VCE PEAK
VCE
IB1
IB
IB2
VCC = 125 V
RC = 25 Ω
D1 = 1N5820 OR
EQUIV.
+11 V
25 µs
0
9V
tr, tf < 10 ns
DUTY CYCLE = 1.0%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
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