MJE13002 Просмотр технического описания (PDF) - Continental Device India Limited
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MJE13002 Datasheet PDF : 4 Pages
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NPN SILICON POWER TRANSISTORS
MJE13002
MJE13003
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
DC Current Gain
**hFE
IC=0.5A, VCE=2V
8
IC=1A,VCE=2V
5
Collector Emitter Saturation Voltage
**VCE(sat)
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A,TC=100oC
Base Emitter Saturation Voltage
**VBE(sat)
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1A, IB=0.25A,TC=100oC
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
fT
IC=100mA, VCE=10V
4.0
f=1MHz
Cob
VCB=10V, IE=0, f=0.1MHz
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
VCC=125V, IC=1A,
IB1=IB2=0.2A, tp=25µs, Duty
tf
Cycle<1%
Inductive Load, Clamped
Voltage Storage Time
tsv
Crossover Time
tC
Fall Time
tfi
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
VClamp=300V, IC=1A,
IB1=0.2A, VBE(off)=5V,
Tc=100ºC
TYP MAX UNIT
40
25
0.5
V
1.0
V
3.0
V
1.0
V
1.0
V
1.2
V
1.1
V
MHz
21
pF
0.1
µs
1.0
µs
4.0
µs
0.7
µs
4.00
µs
0.75
µs
0.15
µs
Continental Device India Limited
Data Sheet
Page 2 of 4
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