MJD44H11 Просмотр технического описания (PDF) - KEXIN Industrial

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производитель

MJD44H11

Complementary Power Transistors

KEXIN Industrial 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector-emitter sustaining voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current gain

Collector capacitance

Current-gain-bandwidth product *2

Delay and rise times

Storage time

Fall time

MJD44H11

Transistors

Symbol

Testconditons

VCEo(sus) IC = 30 mA, IB = 0

ICES VCE = Rated VCEO,VEB = 0

IEBO VBE = 5V, IC = 0

VCE(sat) IC = 8 A, IB = 0.4 A

VBE(sat) IC = 8 A, IB = 0.8 A

IC = 2 A, VCE = 1 V

HFE

IC = 4 A, VCE = 1 V

Ccb VCB = 10 V,ftest = 1 MHz

fT IC = 0.5 A,VCE = 10 V,f = 20 MHz

td + tr IC = 5 A, IB1 = 0.5 A

ts IC = 5 A, IB1 = IB2 = 0.5 A

tf IC = 5 A, IB1 = IB2 = 0.5 A

Min Typ Max Unit

80

V

10 ìA

50 ìA

1

V

1.5 V

60

40

130

pF

50

MHz

300

ns

500

ns

140

ns

Marking

Marking

J44H11

2 www.kexin.com.cn

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