MJ2501 Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

MJ2501

Medium-power complementary Silicon Transistors

Unspecified 

MJ2501 & MJ3001

10A, 150W, 80V

Thermal Characteristics

Characteristic

Symbol

Thermal Resistance Junction to Case

Rθjc

Figure - 1 Power Derating

Maximum

1.17

Unit

°C/W

TC, Temperature(°C)

Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Minimum

Maximum

Unit

OFF Characteristics

Collector-Emitter Sustaining Voltage (1)

VCEO(sus)

80

(IC = 200mA, IB = 0)

MJ2501, MJ3001

Collector Cut off Current

(VCE = 80V, RBE = 1.0kΩ)

ICER

-

(VCE = 80V, RBE = 1.0kΩ, TC = 150°C) MJ2501, MJ3001

Emitter Cut off Current

(VEB = 5.0V, IC = 0)

IEBO

-

Collector Cut off Current

(VCE = 40V, IB = 0)

MJ2501, MJ3001

ICER

-

ON Characteristics

-

V

1.0

5.0

mA

2.0

1.0

DC Current Gain

(IC = 5.0A, VCE = 3.0V)

hFE

1000

-

-

Collector-Emitter Saturation Voltage

(IC = 5.0A, IB = 20mA)

(IC = 10A, IB = 50mA)

VCE(sat)

-

2.0

4.0

V

Base - Emitter On Voltage

(IC = 5.0A, VCE = 3.0V)

VBE(sat)

-

3.0

(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%

Page 2

31/05/05 V1.0

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