MJ16010 Просмотр технического описания (PDF) - SavantIC Semiconductor
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MJ16010 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ16010
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCE(sat)-1
VCE(sat)-2
VBE(sat)
ICER
ICEV
IEBO
Collector-emitter saturation voltage IC=5A; IB=0.7A
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=10A ;IB=1.3A
TC=100
IC=10A ;IB=1.3A
TC=100
Collector cut-off current
VCE=850V;RBE=50>;TC=100
Collector cut-off current
VCE=850V; VBE(off)=1.5V
TC=100
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=15A ; VCE=5V
COB
Output capacitance
VCB=10V,IE=0;f=1.0KHz
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=10A ; VCC=250V
IB1=1.3A ;IB2=2.6A
PW=30µs; RB2=1.6>
Duty CycleC2.0%
MIN TYP. MAX UNIT
450
V
2.5
V
3.0
3.0
V
1.5
1.5
V
2.5
mA
0.25
1.5
mA
10
mA
5
400
pF
20
ns
200
ns
1200
ns
200
ns
2
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