MHVIC915N Просмотр технического описания (PDF) - Freescale Semiconductor
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Компоненты Описание
производитель
MHVIC915N
Freescale Semiconductor
MHVIC915N Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)
35
34
TC = −30_C
33
32
25_C
31
30
29
85_C
28
27
26
0.1
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
50
25_C
45
40
85_C
35
30
25
20
15
10
5
0
0.1
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Added Efficiency versus
Output Power
35
TC = −30_C
34
33
25_C
32
31
30
85_C
29
VDD = 26 Vdc, Pout = 2.5 W
IDQ1 = 50 mA, IDQ2 = 140 mA
28
750
800
850
900
950
1000
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
22
21.5
21
20.5
TC = −30_C
20
VDD = 26 Vdc, Pout = 2.5 W
19.5 IDQ1 = 50 mA, IDQ2 = 140 mA
750
800
850
900
f, FREQUENCY (MHz)
25_C
85_C
950
1000
Figure 8. Power Added Efficiency versus
Frequency
1.2
1.1
TC = −30_C
1
0.9
25_C
0.8
85_C
0.7
0.6
0.5
VDD = 26 Vdc, IDQ1 = 50 mA,
0.4
IDQ2 = 140 mA, f = 880 MHz
0
1
2
3
4
5
6
Pout, OUTPUT POWER (WATTS)
Figure 9. Error Vector Magnitude versus
Output Power
MHVIC915NR2
6
−60
−62
TC = −30_C
−64
25_C
−66
85_C
−68
−70
−72
−74
−76
−78
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
−80
0
1
2
3
4
5
6
Pout, OUTPUT POWER (WATTS)
Figure 10. Spectral Regrowth @ 400 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
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