MHVIC915N Просмотр технического описания (PDF) - Freescale Semiconductor

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MHVIC915N

746-960 MHz, 15 W, 27 V SINGLE N-CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, 865 - 895 MHz

Quiescent Current Accuracy over Temperature ( - 10 to 85°C) at Nominal Value (1)

ΔIQT

—

±5

—

%

Gain Flatness in 30 MHz Bandwidth @ Pout = 23 dBm (800 MHz to 960 MHz)

GF

—

0.20

—

dB

Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 23 dBm

Φ

—

±0.2

—

°

Group Delay @ Pout = 23 dBm Including Output Matching

Delay

—

2.2

—

ns

Part to Part Phase Variation @ Pout = 23 dBm

ΦΔ

—

±10

—

°

Typical GSM Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA,

921- 960 MHz, CW

Output Power, 1 dB Compression Point

P1dB

—

15

—

W

Power Gain @ P1dB

Power Added Efficiency @ P1dB

Gps

—

30

—

dB

PAE

—

56

—

%

Input Return Loss @ P1dB

IRL

—

- 16

—

dB

Error Vector Magnitude @ 5 W

—

—

0.9

—

%

Intermodulation Distortion

(15 W PEP, 2 - Tone, 100 kHz Tone Spacing)

IMD

—

- 30

—

dBc

Power Added Efficiency (15 W PEP, 2 - Tone, 100 kHz Tone Spacing)

PAE

—

35

—

%

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes - AN1977.

RF Device Data

Freescale Semiconductor

MHVIC915NR2

3

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