MGB15N35CL(2006) Просмотр технического описания (PDF) - ON Semiconductor
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MGB15N35CL Datasheet PDF : 10 Pages
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MGP15N35CL, MGB15N35CL
100
DC
10
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
1
P(pk)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
0.01
1
10
100
COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
Figure 19. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
100
DC
10
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
1
P(pk)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
0.01
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
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