MGB15N35CL(2006) Просмотр технического описания (PDF) - ON Semiconductor
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MGB15N35CL Datasheet PDF : 10 Pages
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MGP15N35CL, MGB15N35CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10.0 V
50
VGE = 5.0 V
40
VGE = 4.5 V
VGE = 4.0 V
30 TJ = 25°C
VGE = 3.5 V
20
VGE = 3.0 V
10
VGE = 2.5 V
0
0
1
2
3
4
5
67
8
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
60
VGE = 10.0 V
50
VGE = 5.0 V
40
30 TJ = 150°C
20
10
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
0
0
1
2
3
4
5
67
8
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
25 VCE = 10 V
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = −40°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
4.0
3.5
VGE = 5.0 V
3.0
IC = 20 A
IC = 25 A
2.5
2.0
1.5
1.0
0.5
0.0
−50
IC = 15 A
IC = 10 A
IC = 5 A
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
10000
Ciss
1000
100
Coss
10
Crss
2.5
Mean + 4 σ
2.0
1.5
Mean − 4 σ
1.0
0.5
Mean
IC = 1 mA
1
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
0.0
−50 −25
0 25 50 75 100 125 150
TEMPERATURE (°C)
Figure 6. Threshold Voltage vs. Temperature
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