MGB15N35CL(2006) Просмотр технического описания (PDF) - ON Semiconductor
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MGB15N35CL Datasheet PDF : 10 Pages
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MGP15N35CL, MGB15N35CL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TO−220
D2PAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Symbol
RθJC
RθJA
RθJA
TL
Value
1.0
62.5
50
275
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
IC = 2.0 mA
IC = 10 mA
TJ = −40°C to
150°C
TJ = −40°C to
150°C
Zero Gate Voltage Collector Current
ICES
Reverse Collector−Emitter Leakage Current
IECS
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
Gate−Emitter Clamp Voltage
BVGES
VCE = 300 V,
VGE = 0 V
VCE = −24 V
IC = −75 mA
IG = 5.0 mA
TJ = 25°C
TJ = 150°C
TJ = −40°C
TJ = 25°C
TJ = 150°C
TJ = −40°C
TJ = 25°C
TJ = 150°C
TJ = −40°C
TJ = −40°C to
150°C
Gate−Emitter Leakage Current
IGES
VGE = 10 V
TJ = −40°C to
150°C
Gate Resistor (Optional)
RG
−
TJ = −40°C to
150°C
Gate Emitter Resistor
RGE
−
TJ = −40°C to
150°C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
−
−
(Negative)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
TJ = 25°C
TJ = 150°C
TJ = −40°C
−
Min
320
330
−
−
−
−
−
−
25
25
25
17
384
−
10
1.4
0.75
1.6
−
Typ
350
360
1.5
10
0.7
0.35
8.0
0.05
33
36
30
20
600
70
16
1.7
1.1
1.9
4.4
Max Unit
380 VDC
380
20 μADC
40*
1.5
1.0 mA
15*
0.5
50
VDC
50
50
22
VDC
1000 μADC
−
Ω
26
kΩ
2.0 VDC
1.4
2.1*
− mV/°C
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