MD3221N Просмотр технического описания (PDF) - Shindengen
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MD3221N Datasheet PDF : 26 Pages
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The substrate wiring between the input condenser
to VDD and P.GND2 is subject to the greatest
variation in current, and wiring design should
therefore focus primarily on reducing its impedance
to the absolute minimum. Refer to '16. Cautions
for Pattern Design' for details.
◆Selecting the Regenerative Diode (D2)
The MD3221N employs synchronous rectification
using a regenerative MOSFET, and requires a
diode to bypass the regenerative current during
the dead-time interval. If this diode is not present
regenerative current flows in the MOSFET body
diode during the dead-time interval, resulting in
increased losses and noise. A Schottky barrier
diode with low VF is ideal for use in preventing
current flowing in the body diode, however it is
important that this diode has a low leakage current
to prevent thermal runaway.
Recommended component :
D1FM3 (Shindengen)
30V, 3A VF =0.4V（max） IR=0.1mA（max）
M1FM3 (Shindengen)
30V, 2.1A VF =0.4V（max） IR=0.05mA（max）
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