B20200 Просмотр технического описания (PDF) - ON Semiconductor
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B20200 Datasheet PDF : 4 Pages
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MBRF20200CT
Preferred Device
SWITCHMODE™
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low–voltage, high–frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL94, VO at 1/8″
• Electrically Isolated. No Isolation Hardware Required.
• UL Recognized File #E69369
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B20200
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
200 VOLTS
1
2
3
1
2
3
ISOLATED TO–220
CASE 221D
STYLE 3
MARKING DIAGRAM
B20200
© Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 2
B20200 = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRF20200CT TO–220
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MBRF20200CT/D
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