DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBRD1035CTL(2000) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MBRD1035CTL
(Rev.:2000)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBRD1035CTL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MBRD1035CTL
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 115°C)
Per Leg
Per Package
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115°C)
Per Leg
Non–Repetitive Peak Surge Current
Per Package
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case
Per Leg
Thermal Resistance – Junction to Ambient (Note 1.)
Per Leg
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.)
see Figure 2
IF = 5 Amps, TJ = 25°C
IF = 5 Amps, TJ = 100°C
IF = 10 Amps, TJ = 25°C
IF = 10 Amps, TJ = 100°C
Per Leg
Maximum Instantaneous Reverse Current (Note 2.)
see Figure 4
(VR = 35 V, TJ = 25°C)
(VR = 35 V, TJ = 100°C)
(VR = 17.5 V, TJ = 25°C)
(VR = 17.5 V, TJ = 100°C)
Per Leg
1. Rating applies when using minimum pad size, FR4 PC Board
2. Pulse Test: Pulse Width 250 µs, Duty Cycle 2.0%.
Symbol
VRRM
VRWM
VR
IO
IFRM
IFSM
Tstg, Tc
TJ
dv/dt
RθJC
RθJA
VF
IR
Value
35
5.0
10
10
50
–55 to +125
–55 to +125
10,000
2.43
68
0.47
0.41
0.56
0.55
2.0
30
0.20
5.0
Unit
Volts
Amps
Amps
Amps
°C
°C
V/µs
°C/W
°C/W
Volts
mA
http://onsemi.com
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]