MBRD1035CTL(2000) Просмотр технического описания (PDF) - ON Semiconductor
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MBRD1035CTL Datasheet PDF : 8 Pages
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MBRD1035CTL
SWITCHMODE™
Schottky Power Rectifier
DPAK Power Surface Mount Package
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency switching
power supplies, free wheeling diode and polarity protection diodes.
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction –
May be Paralleled for High Current Output
• High dv/dt Capability
• Short Heat Sink Tap Manufactured – Not Sheared
• Very Low Forward Voltage Drop
• Epoxy Meets UL94, VO at 1/8”
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 75 units per plastic tube
• Available in 16 mm Tape and Reel, 2500 units per Reel,
Add “T4’’ to Suffix part #
• Marking: B1035CL
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
35 VOLTS
1
4
3
4
1
3
DPAK
CASE 369A
PLASTIC
MARKING DIAGRAM
B1035CL
B1035CL = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRD1035CTL
DPAK
75 Units/Rail
MBRD1035CTLT4 DPAK 2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2000
1
October, 2000 – Rev. 1
Publication Order Number:
MBRD1035CTL/D
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