MBR30100CT Просмотр технического описания (PDF) - Shanghai Lunsure Electronic Tech
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производитель
MBR30100CT Datasheet PDF : 2 Pages
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MBR30100CT
Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating J unct ion Temperature: -55°C to +150°C
• Storage Temperature: - 5 5°C to +150°C
Device Maximum
Catalog
Marking Recurrent
Number
Peak
Reverse
Voltage
MBR30100CT MBR30100CT 100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
70V
100V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
30A TC = 125°C
Peak Forward Surge
IFSM
Current
250A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
TJ = 25°C
VF
.85V IFM = 15A;
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
500uA TJ = 25°C
7mA TJ = 125°C
30 Amp
Schottky Barrier
Rectif ier
100 Volts
TO-220AB
B
L
M
C
D
K
A
E
F
I
HH
PIN 1
PIN 3
G
J
N
PIN 2
CASE
INCHES
MM
A
.560
.625
14.22 15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
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