MBR10H100CTG Просмотр технического описания (PDF) - ON Semiconductor

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MBR10H100CTG

SWITCHMODE™ Power Rectifier 100 V, 10 A

ON Semiconductor 

MBR10H100CT

MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR) TC = 168°C

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 165°C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

VRRM

100

V

VRWM

VR

IF(AV)

5.0

A

IFRM

10

A

IFSM

180

A

Operating Junction Temperature (Note 1)

Storage Temperature

Voltage Rate of Change (Rated VR)

Controlled Avalanche Energy (see test conditions in Figures 10 and 11)

ESD Ratings: Machine Model = C

Human Body Model = 3B

TJ

Tstg

dv/dt

WAVAL

+175

*65 to +175

10,000

100

> 400

> 8000

°C

°C

V/ms

mJ

V

THERMAL CHARACTERISTICS

Maximum Thermal Resistance − Junction−to−Case

− Junction−to−Ambient

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

RqJC

RqJA

2.0

°C/W

60

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 5.0 A, TC = 25°C)

(IF = 5.0 A, TC = 125°C)

(IF = 10 A, TC = 25°C)

(IF = 10 A, TC = 125°C)

vF

V

0.73

0.61

0.85

0.71

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 125°C)

(Rated DC Voltage, TC = 25°C)

iR

mA

4.5

0.0035

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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