MBD110DWT1G Просмотр технического описания (PDF) - ON Semiconductor
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MBD110DWT1G Datasheet PDF : 6 Pages
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MBD110DWT1, MBD330DWT1, MBD770DWT1
TYPICAL CHARACTERISTICS
MBD330DWT1
2.8
MBD330DWT1
2.4
f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Total Capacitance
500
MBD330DWT1
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 7. Minority Carrier Lifetime
10
MBD330DWT1
1.0
TA = 100°C
TA = 75°C
0.1
TA = 25°C
0.01
100
MBD330DWT1
10
TA = 85°C
TA = −40°C
1.0
TA = 25°C
0.001
0
6.0
12
18
24
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Reverse Leakage
0.1
30
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Forward Voltage
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