MBD110DWT1(2001) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MBD110DWT1
(Rev.:2001)

Dual Schottky Barrier Diodes

ON Semiconductor 

MBD110DWT1 MBD330DWT1 MBD770DWT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µA)

V(BR)R

MBD110DWT1

7.0

10

MBD330DWT1

30

—

MBD770DWT1

70

—

Volts

—

—

—

Diode Capacitance

(VR = 0, f = 1.0 MHz, Note 1)

Total Capacitance

(VR = 15 Volts, f = 1.0 MHz)

(VR = 20 Volts, f = 1.0 MHz)

Reverse Leakage

(VR = 3.0 V)

(VR = 25 V)

(VR = 35 V)

Noise Figure

(f = 1.0 GHz, Note 2)

CT

MBD110DWT1

CT

MBD330DWT1

MBD770DWT1

IR

MBD110DWT1

MBD330DWT1

MBD770DWT1

NF

MBD110DWT1

pF

—

0.88

1.0

pF

—

0.9

1.5

—

0.5

1.0

—

0.02

0.25

µA

—

13

200

nAdc

—

9.0

200

nAdc

dB

—

6.0

—

Forward Voltage

(IF = 10 mA)

(IF = 1.0 mAdc)

(IF = 10 mA)

(IF = 1.0 mAdc)

(IF = 10 mA)

VF

MBD110DWT1

MBD330DWT1

MBD770DWT1

Vdc

—

0.5

0.6

—

0.38

0.45

—

0.52

0.6

—

0.42

0.5

—

0.7

1.0

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