DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M62362P Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
M62362P Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
M62362P/FP
Preliminary
Electrical Characteristics
<Digital Part>
(VDD, VIN = +5 V 10%, VDD VIN, GND = VDAref = 0 V, Ta = –20 to +85C, unless otherwise noted.)
Limits
Item
Symbol
Min
Typ
Max
Unit
Conditions
Supply voltage
VDD
4.5
5.0
5.5
V
Input leak current
IILK
–10
10
A VIN = 0 to VDD
Input low voltage
VIL
0.2 VDD
V
Input high voltage
VIH
0.8 VDD
V
Output low voltage
Output high voltage
VOL
VOH
VDD – 0.4
0.4
V IOL = 2.5 mA
V IOH = –400 A
<Analog Part>
(VDD, VIN = +5 V 10%, VDD VIN, GND = VDAref = 0 V, Ta = –20 to +85C, unless otherwise noted.)
Limits
Item
Symbol Min
Typ
Max
Unit
Conditions
Input voltage
Output voltage
Input current
VIN
0
VDD
V
VO
0
VDD
V
VIN = 0 to VDD
IIN
0.75
1.5
mA
VIN = 5 V, VDAref = 0 V
Proportional to (VIN – VDAref)
D/A reference source current IDAref
D/A output sink or source
IO
current
–4.5 –2.25
–1.0
mA
VIN1 = VIN2 = VIN3 = 5 V,
VDAref = 0 V
Proportional to (VIN – VDAref)
1.0 A/LSB
Output impedance
Resolution
RO
RES
1.8
3.6
kConstant for all D/A output mode
1280
STEP
Differential nonlinearity DNL
–1
1
LSB
Nonlinearity
NL
–0.6
0.6
%FS
Nonlinearity for channels NL
–0.4
0.4
%FS
Note: Polarity of current, (+) is sink into IC and (–) is source from IC.
R03DS0044EJ0300 Rev.3.00
Jun 03, 2011
Page 4 of 10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]