M29W160FB70NS Просмотр технического описания (PDF) - Numonyx -> Micron

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производитель

M29W160FB70NS

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Numonyx -> Micron 

M29W160FT M29W160FB

M29W320FT M29W320FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block)

3 V supply Flash memory

Features

■ Supply voltage

– VCC = 2.5 V to 3.6 V (access time: 80 ns) or

2.7 to 3.6 V (access time: 70 ns) for

Program, Erase and Read

– VPP = 12 V for Fast Program (optional,

available in the M29W320FT/B only)

■ Access time: 70, 80 ns

■ Programming time

– 10 µs per byte/word typical

■ Memory organization:

– M29W160FT/B: 35 blocks including 1 boot

block (top or bottom location), 2 parameter

blocks and 32 main blocks

– M29W320FT: 67 blocks including 1 boot

block (top or bottom location), 2 parameter

blocks and 64 main blocks

■ Program/Erase controller

– Embedded byte/word program algorithms

■ Erase Suspend and Resume modes

– Read and Program another block during

Erase Suspend

■ Unlock Bypass Program command

– Faster production/batch programming

■ VPP/WP pin for Fast program and Write Protect

(available in the M29W320FT/B only)

■ Temporary block unprotection mode

■ Common Flash interface

– 64 bit security code

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

TSOP48 (N)

12 x 20 mm

FBGA

TFBGA48 (ZA)

6 x 8 mm

■ Electronic signature

– Manufacturer code: 0020h

– Top device codes

M29W160FT: 22C4h

M29W320FT: 22CAh

– Bottom device codes

M29W160FB: 2249h

M29W320FB: 22CBh

■ Automotive device grade 3:

– Temperature: –40 to 125 °C

– Automotive grade certified

■ TSOP48 package is ECOPACK®

March 2008

Rev 3

1/57

www.numonyx.com

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