NTE213 Просмотр технического описания (PDF) - NTE Electronics

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NTE213

Germanium PNP Transistor High Power, High Gain Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

VCB = 2V, IC = 5A

VCB = 2V, IC = 15A

VCB = 2V, IC = 25A

IC = 5A, IB = 500mA

IC = 25A, IB = 2A

IC = 5A, IB = 500mA

IC = 25A, IB = 2A

50 75 100

25 47 –

15 38 –

– 0.06 0.1 V

– 0.2 0.3 V

– 0.65 1.0 V

– 1.0 2.0 V

Common–Emitter Cutoff Frequency

fαe VCE = 6V, IC = 5A

2.0 2.7 – kHz

1.250 (31.75

Dia Max

1.005 (25.55)

Dia Max

.500

(12.7)

Max

.520 (13.2)

Max

.710

(18.03)

Max

Emitter

.312 (7.93)

10–32 UNF–2A

.190 (4.83)

.345 (8.76)

Base

Collector/Case

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