DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE213 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге
Компоненты Описание
производитель
NTE213 Datasheet PDF : 2 Pages
1 2
NTE213
Germanium PNP Transistor
High Power, High Gain Amplifier
Description:
The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power,
high–gain applications in high–reliability industrial equipment.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +110°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Elwectrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1A, IB = 0, Note 1
V(BR)CES IC = 300mA, VBE = 0, Note 1
Floating Potential
Collector Cutoff Current
VEBF
ICBO
VCB = 75V, IE = 0
VCB = 2V, IE = 0
VCB = 74V, IE = 0
VCB = 75V, IE = 0, TC = +71°C
Emitter Cutoff Current
IEBO
VBE = 25V, IC = 0
VBE = 30V, IC = 0
VBE = 40V, IC = 0
VBE = 40V, IC = 0, TC = +71°C
Min Typ Max Unit
60 – – V
75 – – V
– – 1.0 V
– 0.8 0.2 mA
– 0.9 4.0 mA
– 4.0 15 mA
– 0.2 4.0 mA
– 0.2 4.0 mA
– 0.2 4.0 mA
– 2.7 15 mA
Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]