AFP02N8-212 Просмотр технического описания (PDF) - Alpha Industries

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AFP02N8-212

General Purpose Packaged PHEMT Chips

Alpha Industries 

General Purpose Packaged PHEMT Chips

AFP02N8-212, AFP02N8-213

Features

s Low Noise Figure, 1.55 dB @ 4 GHz

s High Associated Gain, 13 dB @ 4 GHz

s High MAG, > 15 dB @ 4 GHz

s 0.7 µm Ti/Pd/Au Gates

s Passivated Surface

s Low Cost Metal Ceramic Package

s Available with Two Lead Lengths

s Available in Tape and Reel Packaging

Description

The AFP02N8-212, 213 are general purpose packaged

PHEMT chips that have excellent gain and noise

performance through X band, making them suitable for a

wide range of commercial applications. The devices

employ 0.7 µm Ti/Pd/Au gates and surface passivation to

ensure a rugged, reliable part. Available in metal ceramic

packages with a choice of two lead lengths. The

components are also available in tape and reel and are

ready for automatic insertion equipment.

213

Drain

Source

Drain

Source

Gate

Source

Source

Gate

212

Absolute Maximum Ratings

Characteristic

Drain to Source Voltage (VDS)

Gate to Source Voltage (VGS)

Drain Current (IDS)

Gate Current (IGS)

Total Power Dissipation (PT)

Storage Temperature (TST)

Channel Temperature (TCH)

Value

6V

-3 V

IDSS

10 µA

300 mW

-65 to +150°C

175°C

Electrical Specifications at 25°C

Parameter

Saturated Drain Current (IDSS)

Transconductance (gm)

Pinch-off Voltage (VP)

Gate to Source

Breakdown Voltage (Vbgs)

Noise Figure (NF)

Associated Gain (GA)

Test Conditions

VDS = 2 V, VGS = 0 V

VDS = 2 V, IDS = 15 mA

VDS = 2 V, IDS = 0.3 mA

IGS = -200 µA

VDS = 2 V, IDS = 15 mA, F = 4 GHz

Min.

25.0

30.0

-0.4

-6.0

12.0

Typ.

Max.

Unit

55.0

90.0

mA

45.0

mS

-1.2

-2.0

V

8.0

V

1.55

2.0

dB

13.2

dB

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

1

Specifications subject to change without notice. 6/99A

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