DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RF2314(1999) Просмотр технического описания (PDF) - RF Micro Devices

Номер в каталоге
Компоненты Описание
производитель
RF2314
(Rev.:1999)
RFMD
RF Micro Devices RFMD
RF2314 Datasheet PDF : 4 Pages
1 2 3 4
RF2314
Absolute Maximum Ratings
Parameter
Supply Voltage
Supply Current
Operating Ambient Temperature
Storage Temperature
Rating
8.0
32
-40 to +85
-40 to +150
Unit
V
mA
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
4
Overall
Frequency Range
3.0V Performance
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Output Return Loss
Isolation
5.0V Performance
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Output Return Loss
Isolation
Power Supply
Operating Voltage
Operating Current
Specification
Min.
Typ.
Max.
150 to >2500
12.9
16.6
7.9
1.4
+9.0
-1.0
10
17
20
14.2
19.1
8.6
1.5
+18.0
+8.0
13
28
20
2.7 to 6.0
5.7
12.5
Unit
MHz
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
V
mA
mA
Condition
T=27 °C, VCC=3.0V, Freq=900MHz
NOTE: Lower frequencies can be obtained
with inductive coupling.
T=27 °C, VCC=3.0V, Freq=900MHz
Freq = 150 MHz
Freq = 1900 MHz
T=27 °C, VCC=5.0V, Freq=900MHz
Freq = 150 MHz
Freq = 1900 MHz
VCC = 3.0 V
VCC = 5.0 V
4-88
Rev A3 990216

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]