KSC5321 Просмотр технического описания (PDF) - Inchange Semiconductor
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KSC5321 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5321
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
800
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
500
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
1.0
V
1.5
V
10 μA
10 μA
hFE-1
DC Current Gain
IC= 0.6A; VCE= 5V
15
40
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
8
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
IE= 0; VCB= 10V; ftest= 1MHz
IC= 0.6A ;VCE= 10V; ftest= 1MHz
65
pF
14
MHz
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 1A; IB1= -IB2=0.2A;
VCC= 125V
IC= 4A; IB1= 0.8A; IB2= -1.6A;
VCC= 250V
0.5 μs
6.5 μs
0.3 μs
0.5 μs
3.0 μs
0.3 μs
isc Website：www.iscsemi.cn
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