KSC5027 Просмотр технического описания (PDF) - Tiger Electronic
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KSC5027 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
High Voltage and High Reliability
Product specification
KSC5027
DESCRIPTION
■ NPN Silicon Transistor
■ High Speed Switching
■ Wide SOA
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
l
Value Unit
Collector-Base Voltage
VCBO 1100 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
800 V
7.0 V
3.0 A
1.5 A
50 W
150 oC
-55~150 oC
TO-220
Electrical Characteristics ( Ta = 25℃ )
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICBO VCE=800V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE(1)
hFE(2)
IC=10mA, IB=0
VCE=5V, IC=0.2A
VCE=5V, IC=1.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn Off Time
VCE(sat)
VBE(sat)
fT
Cob
tS
IC=1.5A,IB=0.3A
IC=1.5A,IB=0.3A
VCE=10V, IC=0.2A
VCB=10V,IE=0,f=1.0MHz
IC=5IB1=-2.5IB2=2.0A,
Min.
—
—
800
10
8
—
—
—
—
—
Typ.
—
—
Max. Unit
10 uA
10 uA
—
—
V
—
40
—
—
— 2.0 V
— 1.5 V
15
— MHz
60
— pF
— 3.0 us
hFE Classification
Classification
hFE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
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