KBU4A Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
KBU4A Datasheet PDF : 4 Pages
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KBU4A thru KBU4M
Vishay General Semiconductor
100
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
150
TJ = 25 °C
f = 1.0 MHz
100
Vsig = 50 mVp-p
75
50
25
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
50
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBU
0.160 (4.1)
0.140 (3.6)
0.935 (23.7)
0.895 (22.7)
0.760
(19.3)
MAX.
0.700
(17.8)
0.660
(16.8)
0.075 (1.9) R TYP. (2 Places)
0.185 (4.7)
0.165 (4.2)
45°
0.085 (2.2)
0.065 (1.7)
0.455 (11.3)
0.405 (10.3)
1.0
(25.4)
MIN.
0.220 (5.6)
0.180 (4.6)
0.205 (5.2)
0.185 (4.7)
0.052 (1.3)
0.048 (1.2)
DIA.
0.240 (6.09)
0.200 (5.08)
0.280 (7.1)
0.260 (6.6)
Document Number: 88656 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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