SST271 Просмотр технического описания (PDF) - Vishay Semiconductors
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SST271 Datasheet PDF : 5 Pages
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J/SST270 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Symbol
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS(F)
gfs
gos
Ciss
Crss
en
Test Conditions
IG = 1 mA , VDS = 0 V
VDS = –15 V, ID = –1 nA
VDS = –15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 125_C
VDG = –15 V, ID = –1 mA
VDS = –15 V, VGS = 10 V
IG = –1 mA , VDS = 0 V
VDS = –15 V, VGS = 0 V
f = 1 kHz
VDS = –15 V, VGS = 0 V
f = 1 MHz
VDG = –10 V, VGS = 0 V
f = 1 kHz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
Limits
J/SST270
J/SST271
Typa Min Max Min Max Unit
45
30
30
V
0.5
2.0
1.5
4.5
–2
–15
–6
–50 mA
10
200
200
pA
5
nA
10
pA
–10
–0.7
V
6
15
8
18
mS
200
500
mS
20
pF
4
20
nV⁄
√Hz
PSCIA
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200
–100
IDSS
160
–80
rDS
120
–60
80
–40
40
0
0
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
2
4
6
8
VGS(off) – Gate-Source Cutoff Voltage (V)
–20
0
10
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18
250
15
200
gfs
12
150
gos
9
100
6
50
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
3
0
0
2
4
6
8
10
VGS(off) – Gate-Source Cutoff Voltage (V)
www.vishay.com
8-2
Document Number: 70258
S-04233—Rev. D, 02-Jul-01
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