J201 Просмотр технического описания (PDF) - Vishay Semiconductors
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J201 Datasheet PDF : 6 Pages
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J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500
VGS(off) = −0.7 V
VDS = 10 V
400
300
TA = −55_C
25_C
200
Transfer Characteristics
2
VGS(off) = −1.5 V
VDS = 10 V
1.6
TA = −55_C
1.2
25_C
0.8
125_C
100
0.4
125_C
0
0
−0.1
−0.2
−0.3
−0.4
VGS − Gate-Source Voltage (V)
−0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = −0.7 V
1.2
VDS = 10 V
f = 1 kHz
TA = −55_C
0.9
25_C
0.6
125_C
0.3
0
0
−0.1
−0.2
−0.3
−0.4
VGS − Gate-Source Voltage (V)
−0.5
Circuit Voltage Gain vs. Drain Current
200
gfs RL
160
AV + 1 ) RLgos
Assume VDD = 15 V, VDS = 5 V
10 V
120
RL + ID
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
4
VGS(off) = −1.5 V
3.2
VDS = 10 V
f = 1 kHz
2.4
TA = −55_C
25_C
1.6
0.8
125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2000
1600
1200
VGS(off) = −0.7 V
80
VGS(off) = −0.7 V
−1.5 V
40
0
0.01
0.1
1
ID − Drain Current (mA)
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4
800
400
0
0.01
−1.5 V
0.1
1
ID − Drain Current (mA)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
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