SGM2016AN Просмотр технического описания (PDF) - Sony Semiconductor
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SGM2016AN Datasheet PDF : 5 Pages
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SGM2016AN
Electrical Characteristics
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
Symbol
IDSX
IG1SS
IG2SS
IDSS
VG1S (OFF)
VG2S (OFF)
gm
Ciss
Crss
NF
Ga
Conditions
VDS = 12V
VG1S = –4V
VG2S = 0V
VG1S = –4.5V
VG2S = 0V
VDS = 0V
VG2S = –4.5V
VG1S = 0V
VDS = 0V
VDS = 5V
VG1S = 0V
VG2S = 0V
VDS = 5V
ID = 100µA
VG2S = 0V
VDS = 5V
ID = 100µA
VG1S = 0V
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1kHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 900MHz
(Ta = 25°C)
Min.
Typ.
Max. Unit
50 µA
–8 µA
–8 µA
10
35 mA
–2.5 V
–2.5 V
20
30
ms
0.9
2.0 pF
25
40
fF
1.2
2.0 dB
17
21
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
40
(VG2S = 1.5V)
30
20
10
0
0
1
2
3
4
5
VDS – Drain to source voltage [V]
VG1S
= 0V
–0.3V
–0.6V
–0.9V
6
–2–
25
(VDS = 5V)
ID vs. VG1S
VG2S = 1.5V
20
15
1.0V
0.5V
0V
10
–0.5V
5
0
–2.0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
–1.0V
0
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