IS354 Просмотр технического описания (PDF) - Unspecified
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IS354 Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
±50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BVECO
Power Dissipation
35V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.26mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V )
F
Reverse Voltage (VR)
Reverse Current (IR)
Output Collector-emitter Breakdown (BVCEO)
Emitter-collector Breakdown (BV )
ECO
Collector-emitter Dark Current (ICEO)
Coupled Current Transfer Ratio (CTR)
1.2 1.4 V
5
V
10 µA
35
V
6
V
100 nA
20
400 %
I = ±20mA
F
IR = 10µA
VR = 4V
IC = 0.1mA
I = 10uA
E
VCE = 20V
±1mA I , 5V V
F
CE
Collector-emitter Saturation VoltageVCE (SAT)
0.2 V
Input to Output Isolation Voltage VISO 3750
5300
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
4
Output Fall Time tf
3
VRMS
VPK
Ω
18 µs
18 µs
±20mA IF, 1mA IC
See note 1
See note 1
VIO = 500V (note 1)
VCE = 2V ,
I
C
=
2mA,
R
L
=
100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
22/4/02
DB92856l-AAS/A3
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