IRFP440 Просмотр технического описания (PDF) - Intersil
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IRFP440 Datasheet PDF : 7 Pages
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IRFP440
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN TYP
-
-
-
-
MAX
8.8
35
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 8.8A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs
-
-
1.8
V
210 460
970
ns
2
4.2
8.9
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 11mH, RG = 50Ω, peak IAS = 8.8A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-3
10-5
PDM
SINGLE PULSE
10-4
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-349
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