SIHFP23N50L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

SIHFP23N50L-E3

Power MOSFET

Vishay Semiconductors 

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

D.U.T

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

-

+

RG

• dV/dt controlled by RG

+

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

- VDD

• D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

VGS=10V *

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

dI/dt

D.U.T. VDS Waveform

Diode Recovery

dV/dt

VDD

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

ISD

* VGS = 5V for Logic Level Devices

Fig. 17 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91209.

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

www.vishay.com

7

Share Link: