IRFP23N50LPBF Просмотр технического описания (PDF) - Vishay Semiconductors
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IRFP23N50LPBF Datasheet PDF : 8 Pages
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IRFP23N50L, SiHFP23N50L
Vishay Siliconix
100000
10000
1000
VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
20
15
10
5
0
0 100 200 300 400 500 600
VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
100
10us
100us
10
1ms
TC = 25 °C
TJ = 150 °C
1 Single Pulse
10
100
10ms
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
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4
12 ID = 23
10
7
VDS = 400 V
VDS = 250 V
VDS = 100 V
5
2
0
0
24
48
72
96
120
QG, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100.00
10.00
TJ = 150 °C
1.00
TJ = 25 °C
VGS = 0 V
0.10
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature
(°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
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