IRFD9110 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

IRFD9110

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Fairchild Semiconductor 

IRFD9110

Typical Performance Curves Unless Otherwise Specified (Continued)

2.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TJ = -55oC

2.0

TJ = 25oC

TJ = 125oC

1.5

1.0

0.5

-100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-10

TJ = 150oC

-1.0

TJ = 25oC

0

0

-1.2

-2.4

-3.6

-4.8

-6.0

ID, DRAIN CURRENT (A)

FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

-0.1

-0.4 -0.6 -0.8

-1.0 -1.2 -1.4

-1.6 -1.8

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

5

ID = -0.7A

0

-5

-10

VDS = -20V

VDS = -50V

-15

VDS = -80V

-20

0

2

4

6

8

10

Qg(TOT), TOTAL GATE CHARGE (nC)

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VDS

VARY tP TO OBTAIN

REQUIRED PEAK IAS

RG

0V

VGS

tP

L

DUT

-

VDD

+

IAS

0.01Ω

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

tAV

0

VDD

IAS

tP

BVDSS

VDS

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

©2002 Fairchild Semiconductor Corporation

IRFD9110 Rev. B

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