IRFD9110 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFD9110 Datasheet PDF : 7 Pages
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IRFD9110
Typical Performance Curves Unless Otherwise Specified (Continued)
-5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-4
VGS = -10V
VGS = -9V
-12.0
-9.6
VDS > ID(ON) x rDS(ON)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-3
VGS = -8V
-2
VGS = -7V
-1
VGS = -6V
VGS = -5V
0
0
-2
-4
-6
-8
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
5
2µs PULSE TEST
4
-7.2
TJ = 125oC
-4.8
TJ = 25oC
TJ = -55oC
-2.4
0
0
-2
-4
-6
-8
-10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
2.5
VGS = -10V, ID = -0.3A
PULSE DURATION = 80µs
2.0 DUTY CYCLE = 0.5% MAX
3
1.5
2
VGS = -10V
VGS = -20V
1
0
0
-1
-2
-3
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.0
0.5
0
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS = CGD
COSS ≈ CDS + CGD
300
CISS
200
100
00
COSS
CRSS
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
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