IRFD210 Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFD210

Power MOSFET

Vishay Semiconductors 

IRFD210, SiHFD210

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T.

IAS

0.01 W

+

- VDD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

www.vishay.com

6

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Document Number: 91129

S10-2462-Rev. C, 08-Nov-10

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