IRFBC40 Просмотр технического описания (PDF) - Harris Semiconductor
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IRFBC40 Datasheet PDF : 7 Pages
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IRFBC40, IRFBC42
Typical Performance Curves Unless Otherwise Specified (Continued)
1
0.5
0.2
0.1 0.1
0.05
00..0022
0.01
10-2
10-3
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
102
IRFBC40
IRFBC42
10 IRFBC40
IRFBC42
OPERATION IN THIS REGION
IS LIMITED BY rDS(ON)
10µs
100µs
1ms
1
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1
10
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
DC
103
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
8
VGS = 10V
VGS = 6.0V
6
4
VGS = 5.5V
80µs PULSE TEST
VGS = 5.0V
2
VGS = 4.5V
VGS = 4.0V
0
0
60
120
180
240
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
10
80µs PULSE TEST
8
6
4
VGS =10V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
10
VDS ≥ 100V
80µs PULSE TEST
1
TJ = 150oC
0.1
TJ = 25oC
2
VGS = 4.5V
VGS = 4.0V
0
10-2
0
3
6
9
12
15
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
5-4
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