IRFB13N50APBF(2008) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFB13N50APBF
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFB13N50A, SiHFB13N50A

Vishay Siliconix

RD

15

VDS

VGS

D.U.T.

12

RG

+- VDD

10 V

9

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

6

VDS

90 %

3

0

25

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

1

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.001

0.00001

SINGLE PULSE

(THERMAL RESPONSE)

P DM

t1

t2

Notes:

1. Duty factor D = t1 /t2

2. Peak TJ = PDM x ZthJC + TC

0.001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

15 V

VDS

L

Driver

RG

20 V

tp

D.U.T.

IAS

0.01 Ω

+

- VDAD

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91095

S-81393-Rev. A, 07-Jul-08

VDS

tp

IAS

Fig. 12b - Unclamped Inductive Waveforms

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