SIHFB13N50A-E3 Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.
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SIHFB13N50A-E3 Datasheet PDF : 7 Pages
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IRFB13N50A, SiHFB13N50A
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12
ID = 14A
10
VDS = 400V
VDS = 250V
VDS = 100 V
7
5
2
0
0
12
24
36
48
60
OG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.2
0.5
0.8
VSD, Source-to-Drain Voltage (V)
VGS = 0 V
1.1
1.4
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
4
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