FA01220A Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC

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производитель

FA01220A

GaAs FET HYBRID IC

MITSUBISHI ELECTRIC  

TYPICAL CHARACTERISTICS 2

Gain, ACP vs VD

25

VG=-2.5V

f=1453MHz

PO=30.5dBm

0

Gain

-10

20

-20

-30

15

ACP(+50kHz)

-40

ACP(-50kHz)

-50

ACP(-100kHz)

-60

10

ACP(+100kHz)

-70

3.0

3.2

3.4

3.6

3.8

4.0

VD(V)

EQUIVALENT CIRCUIT

1ST GATE

2ND GATE

1ST DRAIN

MITSUBISHI SEMICONDUCTOR GaAs FET

FA01220A

GaAs FET HYBRID IC

800

VG=-2.5V

f=1453MHz

PO=30.5dBm

IDt vs VD

700

600

500

3.0

3.2

3.4

3.6 3.8

4.0

VD(V)

2ND DRAIN

RF INPUT

MATCHING

CIRCUIT

MATCHING

CIRCUIT

MATCHING

CIRCUIT

RF OUTPUT

GND

Nov. ´97

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