IRF830A Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

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Компоненты Описание

производитель

IRF830A

Power MOSFET

Kersemi Electronic Co., Ltd. 

www.kersemi.com

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

IRF830A, SiHF830A

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

1 D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

0.01

0.00001

PDM

t1

SINGLE PULSE

(THERMAL RESPONSE)

t2

Notes:

1. Duty factor D = t1 / t 2

2. Peak TJ = P DM x ZthJC + TC

0.0001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

15 V

VDS

L

Driver

RG

20 V

tp

D.U.T.

IAS

0.01 Ω

+

- VDAD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

tp

IAS

Fig. 12b - Unclamped Inductive Waveforms

5

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