CQY36N(2005) Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
CQY36N Datasheet PDF : 6 Pages
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CQY36N
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Radiant Intensity
IF = 50 mA, tp ≤ 20 ms
Radiant Power
IF = 50 mA, tp ≤ 20 ms
Temp. Coefficient of φe
IF = 50 mA
Angle of Half Intensity
Peak Wavelength
IF = 50 mA
Spectral Bandwidth
IF = 50 mA
Rise time
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs
Fall Time
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs
Virtual Source Diameter
Symbol
Ie
φe
TKφe
ϕ
λp
∆λ
tr
tf
∅
Min
Typ.
Max
Unit
0.7
1.5
7.5
mW/sr
10
mW
- 0.8
%/K
± 55
deg
950
nm
50
nm
400
ns
450
ns
1.2
mm
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
10 4
200
10 3
150
10 2
RthJA
100
10 1
50
10 0
0
0
94 8029
20
40
60
80 100
Tamb - Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
10-1
0
1
2
3
4
94 7996
VF - Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
125
100
75
RthJA
50
25
0
0
94 7916
20
40
60
80 100
Tamb - Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
1.2
1.1
IF = 10 mA
1.0
0.9
0.8
0.7
0
94 7990
20
40
60
80 100
Tamb - Ambient Temperature ( ° C )
Figure 4. Relative Forward Voltage vs. Ambient Temperature
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2
Document Number 81001
Rev. 1.4, 08-Mar-05
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